Islam,1 vladimir protasenko,1 sergei rouvimov,3 patrick fay,3 debdeep jena,1,4,b and huili grace xing1,4,5,c 1school of electrical and computer engineering, cornell university, ithaca, new york 14853, usa. Pdf phononassisted resonant tunneling of electrons in. Pdf uniaxial strain effect on graphenenanoribbon resonant. A resonant tunneling diode rtd is a diode with a resonant tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. Complete guide to semiconductor devices wiley online books. Abstractinterlayer tunnel field effect transistors itfets make use of resonant tunneling between two layers of twodimensional semiconductors to create a negative differential resistance. Resonant transmission in the basecollector junction of a. As seen, the process of resonant tunneling implies the existence of metastable states in the potential barrier region. We propose a new negative conductance device consisting of a heterojunction bipolar transistor with a quantum well and a symmetric double barrier or a. Resonant tunneling in semiconductor heterostructures 2. Tunneling in this region is considered to be a coherent resonant tunneling. Conventional transistor technology will not be able to support future ultrahighspeed applications. Current is fed laterally into the emitter, and the 2d2d resonant tunneling current is controlled by a surface gate. Resonant tunneling transistors can perform more logic per transistor than conventional transistors.
An introduction and optimization of these devices are investigated. Jul, 2000 a novel planar resonant tunneling transistor is demonstrated. In this biquartt, a strong, multiple negative differential resistance ndr characteristic is obtained at room temperature with high current gain 50. High performance resonant tunneling electronic circuit. The currentvoltage characteristic often exhibits negative differential resistance regions all types of tunneling diodes make use of quantum mechanical tunneling. The two main contributions of the present work are the incorporation. The nature and timing of the resonant tunneling transistor opportunity would depend on developments in existing circuit technologies as well as advances in. Resonant tunnelling and negative differential conductance in. Resonant tunnelling into the twodimensional subbands of inse. Thus, in addition to negative conductance, this structure exhibits negative.
The cqwbase structure is confirmed through secondary ion mass spectroscopy and transmission electron microscopy. Resonant tunneling transistors on researchgate, the professional network for scientists. The tunnel fieldeffect transistor tfet is an experimental type of transistor. Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors shubhendu bhardwaj,1 berardi sensalerodriguez,2 huili grace xing,3,4 siddharth rajan,5 and john l. The benzene molecule as a molecular resonanttunneling transistor. Resonant tunneling transistor and its application to. A particularly useful form of a tunneling diode is the resonant tunneling diode rtd. The key difference compared to previously studied structures is that resonant tunneling is achieved by high. Characteristic to the currentvoltage relationship of a. A resonant tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. Over the past decade, resonant tunneling rt structures have shown the great potential for the digital applications of high switching speed and low power consumption characteristics 1,2. Tunneling diodes tds have been widely studied for their importance in achieving very high speed in wideband devices and circuits that are beyond conventional transistor technology. We propose a new negative conductance device consisting of a heterojunction bipolar transistor with a quantum well and a symmetric double barrier or a superlattice in the base region.
Rhets have been built, and extremely compact circuits have been demonstrated using these devices 1216. Enhanced resonant tunneling in symmetric 2d semiconductor. Tunneling is an electron transport mechanism that becomes dominant when device dimensions become comparable to the electrons wavelength, about 10 nm in semiconductors. Integration of rtds resonant tunneling diodes into one or more terminals of conventional transistors has led to a large family of resonant tunneling transistors.
The biquartt does not circumvent the scaling limita. In addition, resonant tunneling transistors, in which the control electrode directly modulates the carrier transport, scale to smaller dimensions than. Haddad center for high frequency microelectronics, solidstateelectronics laboratory, department of electrical engineering and computer science, the uniiersitv of michigan, ann arbor. Resonant tunneling transistors a negative transconductance that is used in logic xor gate with only one transistor. May 05, 2016 we observe a series of sharp resonant features in the differential conductance of graphenehexagonal boron nitridegraphene tunnel transistors over a wide range of bias voltages between 10 and 200 mv. A vertical resonant tunneling transistor for application in. Here, we assume that the chemical potentials of the two graphene electrodes are at the dirac points when the. Rtds operate similarly to traditional transistors in this regard. Surface assembly and ultrafast operation of allnanoscale.
Osa proceedings on 0 ultrafast electronics and optoelectronics 21 volume 14 edited by. Rtds have been used to demonstrate circuits for numerous applications including static random access memories sram, pulse generators, multivalued memory, multivalued and selflatching logic, analoguetodigital converters, oscillator elements, shift registers, lownoise amplification, mobile logic, frequency multiplication, neural networks, and fuzzy logic. Resonant tunneling and negative differential resistance in. Resonant tunnelling and negative differential conductance. The i ds v,v gs characteristics of the device for several v gs values are shown in fig. The basic rtec element is consist of prestage transistor q 1 with current gain. Resonant tunneling transistor with quantum well base and. Resonanttunneling transistors offer the possibility of achieving increased function per unit area, and raise the prospects for progress beyond scaled integrated circuit technology. In particular, resonant tunneling transistors rtts are mainly covered here because transistors are in general more suitable for practical circuits than diodes. Resonant tunneling diode is an important advancement to this problem.
Lateral resonant tunneling transistors employing fieldinduced quantum wells and barriers. The composition, shape, and size of the island gives the different types of solidstate nanoelectronic devices their distinct properties. High performance resonant tunneling electronic circuit with. Recently, resonant tunnelling devices using quantum dots10,11, atomicscale defects12, graphene,14. Resonant tunneling in a novel coupledquantumwell base. Moreover, an electron flow switch is also described for quantum nets. By exploiting their unique characteristic, circuit functional density and speed can be increased without changing the lithographic design rule. Resonant tunneling single electron transistors nasaads.
Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors. Resonant tunnelling gate fieldeffect transistor nasaads. Us4958201a resonant tunneling minority carrier transistor. Resonanttunneling diode wikimili, the best wikipedia reader. In another embodiment the quantum well is defined by the emitter and a potential barrier in the base. The base has a thin base width capable of generating discrete energy levels of monority carriers therein. As compared to the traditional tunneling diodes based on bulk materials, the tunneling devices based on thin boron nitride tunneling barrier and high mobility black phosphorus. Carriers which are minority carriers in the base can be transferred from the emitter via the discrete energy levels in the base to the collector by resonant tunneling at an ultrahigh speed. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application. A new negative differential resistance device, by federico capasso and richard a.
Transconductance measurements reveal that the collector current is attributable to resonant tunneling transfer from the emitter to collector through the modified energy states in the cqwbase. The resonant tunneling diode rtd has been widely studied because of its importance in the field of. Unlike the transistors and sensors, the switch has no relation to the phenomenon of resonant tunneling. Pdf resonant tunneling analogtodigital converter alan. It is possible to make a deep qw between the tunneling. We observe a series of sharp resonant features in the differential conductance of graphenehexagonal boron nitridegraphene tunnel transistors over a wide range of bias voltages between 10 and 200 mv. Resonant tunneling bipolar transistors rtbts, incorporating the nanometer dimension quantum well structures into heterojunction bipolar transistors hbts, are emerging as the most promising functional device due to the high current handling capability and high current gain. When the two electrode layers are of the same material, under certain conditions, one can achieve resonant tunneling between the two.
Tunneling transistors with negative differential resistance have widespread appeal for both digital and analog electronics. Abstract a natural consequence of shrinking the size of semiconductor devices is that tunneling becomes an increasingly important transport process. Pdf 1997 optical society of america find, read and cite all the research you need on researchgate. Double barrier resonant tunneling transistor with a fully two. A resonanttunneling diode rtd is a diode with a resonant tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. Even though its structure is very similar to a metaloxidesemiconductor fieldeffect transistor, the fundamental switching mechanism differs, making this device a promising candidate for low power electronics. This model has been implemented in spice along with new ideas to aid in the convergence of the simulation. The effects of electronelectron interaction in sequential and resonant electron tunneling are studied by using luttinger liq. The currentvoltage characteristic often exhibits negative differential resistance regions contents. Quantum transport devices based on resonant tunneling. Extracting random numbers from quantum tunnelling through. Tfets switch by modulating quantum tunneling through a barrier instead of modulating thermionic. Jul 15, 2020 furthermore, resonant tunneling transistors are demonstrated based on bphbnbp stacks in which the locations of the ndr peaks are tunable by the electrostatic gating. In this threeterminal resonant tunneling device, tunneling transport is con trolled by varying the potential of the ptype quantum well in a resonant tunneling doublebarrier rtd structure.
Digital circuit applications of resonant tunneling devices. The growth of resonant tunneling hot electron transistors using chemical beam epitaxy w. The benzene1, 4dithiolate molecule has been studied experimentally by reed and coworkers3 in a twoterminal geometry. Resonant tunneling an overview sciencedirect topics. The currentvoltage characteristic often exhibits negative differential resistance regions. First, a au electrode was patterned by e lithography on a. The model is based on a model for the resonant tunneling diode and the traditional ebersmoll model of the bipolar transistor. A new negative differential resistance fieldeffect transistor concept, based on resonant tunneling, is demonstrated. In devices governed by drift and diffusion, tunneling can limit minimum layer dimensions as it does. The gate of this novel device consists of an alasgaas double barrier.
The drain current against drain and gate voltages exhibit a peak due to the quenching of the resonant tunneling gate current. Resonanttunneling fieldeffect transistor prestfet, designed for maximum flexibility, can achieve resonant tunneling rt under a variety of bias conditions. Resonant tunneling is a quantum mechanical phenomenon which occurs in a quantum tun. However, the scattering matrix needed for analyzing the switch operation has been calculated by the method given in chap. Volakis 1electrical and computer engineering department, the. Applications of rtds zseveral applications exploit negative differantial resistance ndr of rtds zresonant tunneling transistors to make a three terminal tunneling device rtds are merged with conventional transistors and resonant tunneling bipolar transistors, resonant tunneling hot electron transistors and. Room temperature microwave oscillations in ganaln resonant tunneling diodes with peak current densities up to 220 kacm2 jimy encomendero,1,a rusen yan,1 amit verma,2 s. Resonant tunneling transistor characteristics using a fabrypariot resonator. Gatecontrolled quantum collimation in nanocolumn resonant. Current limitations and applications to this technology are discussed. Vertical resonant tunneling transistors with molecular. Resonant tunneling abstract we propose a new negative conductance device consisting of a heterojunction bipolar transistor with a quantum well and a symmetric double barrier or a superlattice in the base region. We attribute them to electron tunneling assisted by the emission of phonons of welldefined energy. Idealized currentvoltage characteristics of a resonant tunnel transistor.
A model for resonant tunneling bipolar transistors. Atomicmonolayer twodimensional lateral quasiheterojunction. Resonant tunneling assisted propagation and amplification. The use of multiple tunnel barriers is investigated as a. Resonant tunneling assisted propagation and amplification of. A device structure was simulated, and characteristics that resemble that of the resonant tunneling transistor were obtained. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there is a double barrier in the base region. Experimental and theoretical study of quantum dot resonant. Here we realize a resonant tunnelling transistor rtt based on a 2d inse layer sandwiched between two multilayered graphene mlg. Calculations of the currentvoltage characteristics in doublebarrier resonant tunneling diodes and transistors in which the tunneling occurs through the second. Realization of a robust nanotubeheterostructure tunneling transistors solid state comm. Formation process of vertical resonant tunneling transistor the vertical transistor configuration was formed using standard electronbeam e lithography and reactiveion etching rie. One of the latest developments is a fieldeffect transistor gated by a layer of quantum.
Resonant tunneling in a novel coupledquantumwell cqw base transistor is investigated. Thus, one can say that the fundamental requirement for this process. Volakis 1electrical and computer engineering department, the ohio state university, columbus, oh 43212. Phononassisted resonant tunneling of electrons in graphene. Pdf resonant tunneling transistors alan seabaugh academia. This corresponds to a partially incoherent, sequential tunneling region. The growth of resonant tunneling hot electron transistors. Recent works also explore spinpolarized resonant tunneling, which can be useful for application in spintronic devices. Resonant tunnelling rt through a potential double barrier is one of the quantum vertical transport effects in nanostructures with more applications in high frequency electronic diodes and transistors as we will see in chapter 9. We assumed here that the molecules were distributed in a similar manner on. Resonant tunneling transistors rtts beneath the gate in a familiar microelectronic fieldeffect transistor when it is switched on.
Resonant tunneling transistor with quantum well base and high. A model is proposed for the resonant tunneling bipolar transistor current voltage characteristics. The biquartt does not circumvent the scaling limita tions of conventional transistor technology, but it is a pre. The growth structure is similar to that of a doublebarrier resonant tunneling diode rtd, except for a fully twodimensional 2d emitter formed by a quantum well. Output voltages of a folded fourbit resonant tunneling quantizer for the circuit shown in figure 4. Resonant tunneling transistors, tunneling superlattice devices. Extracting random numbers from quantum tunnelling through a. Jan 01, 1994 tunneling is an electron transport mechanism that becomes dominant when device dimensions become comparable to the electrons wavelength, about 10 nm in semiconductors. Doublebarrier quantumwell dbqw tunneling structures have recently drawn a great deal of attention because tunneling is the fastest chargetransport phenomenon in semiconductors. Abstract we mode l and simulate the resonant tunneling and iv characteristics of interlayer tunneling fieldeffect transistors itfets based on transition metal dichalcogenide monolayers, mos2 layers here, using quantum transport simulations with a full band model. In this work, a physicsbased smallsignal equivalent circuit model for the resonant tunneling diode rtd has.
The deposition conditions were the same as those for the formation process of the vertical resonant tunnel transistors. We theoretically demonstrate that vertical heterostructures consisting of two. Resonant tunneling diode last updated september 07, 2020. Enhancement of resonance by the use of multiple tunnel. Nanoscaled resonant tunneling transistors rtt based on mbegrown gaasalas doublebarrier quantum well dbqw structures have been fabricated by a topdown approach using electronbeam lithographic definition of the vertical nanocolumns. Analysis of second level resonant tunneling diodes and transistors. Bipolar quantum resonant tunneling transistor bi quartt has been reported 1, 4. However, most attempts to demonstrate resonant tunneling devices, including grapheneinsulatorgraphene structures, have resulted in low peaktovalley ratios, limiting their application.
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